SI7846DP-T1-E3, US $ .77-1.23 , Vishay/Siliconix, SI7846DP-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SI7846DP-T1-E3: MOSFET 150V 6.7A 5.2W

SI7846DP-T1-E3 Data Sheet

US $ .77~1.23 / Piece | Get Latest Price

Part Number:: SI7846DP-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$1.23
$.95
$.86
$.77

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/26

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Recent History
What is this?

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Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS...
SI7802DN-T1-E3 evaluate
US $1.26 - 1.89 / Piece

MOSFET 250V 1.95A 3.8W 435mohm @ 10V
SI7802DN-T1-GE3 evaluate
US $.75 - 1.2 / Piece

MOSFET 250V 1.95A 3.8W 435mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4 A
Resistance Drain-Source RDS (on) :	50 mOhms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SO	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : PowerPAK SO
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 50 mOhms

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SI7846DP-T1-E3

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