SI7606DN-T1-E3

MOSFET 125V 14.5A 52W 108mohm @ 10V

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SI7606DN-T1-E3 Picture
SeekIC No. : 00163602 Detail

SI7606DN-T1-E3: MOSFET 125V 14.5A 52W 108mohm @ 10V

floor Price/Ceiling Price

Part Number:
SI7606DN-T1-E3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 125 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.9 A
Resistance Drain-Source RDS (on) : 0.108 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerPAK 1212-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : PowerPAK 1212-8
Resistance Drain-Source RDS (on) : 0.108 Ohms
Continuous Drain Current : 3.9 A
Drain-Source Breakdown Voltage : 125 V


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