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SI5915DC-T1-E3

MOSFET 8.0V 4.6A 2.1W 70mohm @ 4.5V

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SeekIC No. : 00162508 Detail

SI5915DC-T1-E3: MOSFET 8.0V 4.6A 2.1W 70mohm @ 4.5V

SI5915DC-T1-E3 Data Sheet

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Part Number:
SI5915DC-T1-E3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 70 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : 1206-8 ChipFET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 70 mOhms
Package / Case : 1206-8 ChipFET


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