SI4435DYPBF, US $ .26-.77 , International Rectifier, SI4435DYPBF DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149393 Detail

SI4435DYPBF: MOSFET

SI4435DYPBF Data Sheet

US $ .26~.77 / Piece | Get Latest Price

Part Number:: SI4435DYPBF
Mfg:: International Rectifier
Supply Ability:: 5000

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Upload time: 2024/12/23

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What is this?

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US $.76 - 1.06 / Piece

MOSFET 40V 10.5A 0.014Ohm
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US $.76 - 1.06 / Piece

MOSFET 40V 10.5A 2.9W 14mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 30 V
Gate-Source Breakdown Voltage :	20 V	Continuous Drain Current :	- 8 A
Resistance Drain-Source RDS (on) :	35 mOhms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8	Packaging :	Tube

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : - 8 A

Parameters:

Technical/Catalog Information	SI4435DYPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	20 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	2320pF @ 15V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI4435DYPBF SI4435DYPBF

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SI4435DYPBF

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