MOSFET N-CH 30V 12.5A 8-SOIC
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
Drain to Source Voltage (Vdss): | 30V | Continuous Drain Current : | 15 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 12.5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 12.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 78nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2240pF @ 15V | ||
Power - Max: | 2.5W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SO |
Technical/Catalog Information | SI4420DYTR |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 12.5A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 12.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2240pF @ 15V |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 78nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | SI4420DYTR SI4420DYTR |