SI4412DY-T1-GE3

MOSFET 30V 7.0A 2.5W 28mohm @ 10V

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SI4412DY-T1-GE3 Picture
SeekIC No. : 00160996 Detail

SI4412DY-T1-GE3: MOSFET 30V 7.0A 2.5W 28mohm @ 10V

floor Price/Ceiling Price

Part Number:
SI4412DY-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 28 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 28 mOhms
Continuous Drain Current : 7 A
Package / Case : SOIC-8 Narrow


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