MOSFET TAPE13 MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 20 mOhm | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |
Technical/Catalog Information | SI4410DY,518 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 34nC @ 5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT96; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SI4410DY,518 SI4410DY,518 |