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SI4004DY-T1-GE3

MOSFET N-CH 20V 8-SOIC

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SeekIC No. : 003430790 Detail

SI4004DY-T1-GE3: MOSFET N-CH 20V 8-SOIC

SI4004DY-T1-GE3 Data Sheet

floor Price/Ceiling Price

US $ .26~.59 / Piece | Get Latest Price
Part Number:
SI4004DY-T1-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.59
  • $.47
  • $.42
  • $.37
  • $.33
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1280pF @ 10V
Power - Max: 5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOICN    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Series: TrenchFET®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 12A
Power - Max: 5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds: 1280pF @ 10V


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