SI1539DL-T1-GE3

MOSFET N/P-CH 30V SC70-6

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SeekIC No. : 003430024 Detail

SI1539DL-T1-GE3: MOSFET N/P-CH 30V SC70-6

floor Price/Ceiling Price

US $ .13~.38 / Piece | Get Latest Price
Part Number:
SI1539DL-T1-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.38
  • $.27
  • $.23
  • $.2
  • $.17
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: N and P-Channel FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25° C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 1.4nC @ 10V Power Dissipation : 21 W
Input Capacitance (Ciss) @ Vds: - Power - Max: 270mW
Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6    

Description

Series: TrenchFET®
Manufacturer: Vishay Siliconix
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Input Capacitance (Ciss) @ Vds: -
Power - Max: 270mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
Gate Charge (Qg) @ Vgs: 1.4nC @ 10V


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