SI1417EDH-T1-GE3

MOSFET P-CH 12V SC-70-6

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SeekIC No. : 003431508 Detail

SI1417EDH-T1-GE3: MOSFET P-CH 12V SC-70-6

floor Price/Ceiling Price

US $ .16~.4 / Piece | Get Latest Price
Part Number:
SI1417EDH-T1-GE3
Mfg:
Supply Ability:
5000

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  • $.16
  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) @ Vgs: 8nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6    

Description

Manufacturer: Vishay Siliconix
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Input Capacitance (Ciss) @ Vds: -
Series: TrenchFET®
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 450mV @ 250µA
Current - Continuous Drain (Id) @ 25° C: 2.7A
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) @ Vgs: 8nC @ 4.5V
Power - Max: 1W
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V


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