SGW50N60HS

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 30% lower E_off compared to previous generation
• Short circuit withstand time – 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E_off increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹ for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	100 50
Pulsed collector current, tp limited by Tjmax	ICpu ls	150
Turn off safe operating area VCE 1200V, Tj 150°C	-	150
Gate-emitter voltage static transient (tp<1µs, D<0.05)	VGE	±20 ±30	V
Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at Tj = 25°C	EAS	280	mJ
Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	s
Power dissipation TC = 25°C	Pt o t	416	W
Operating junction and storage temperature	Tj , Ts tg	-55...+150	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	Tj ( t l )	260

1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.