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SGS6N60UFDTU

IGBT Transistors 600V/3A/w/FRD

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SeekIC No. : 00143835 Detail

SGS6N60UFDTU: IGBT Transistors 600V/3A/w/FRD

SGS6N60UFDTU Data Sheet

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Part Number:
SGS6N60UFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 3 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 6 A Gate-Emitter Leakage Current : 22 W
Power Dissipation : 22 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220F-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 6 A
Package / Case : TO-220F-3
Collector-Emitter Saturation Voltage : 3 V
Power Dissipation : 22 W
Gate-Emitter Leakage Current : 22 W


Parameters:

Technical/Catalog InformationSGS6N60UFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)3A
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGS6N60UFDTU
SGS6N60UFDTU



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