IGBT Transistors Dis High Perf IGBT
SGR6N60UFTM: IGBT Transistors Dis High Perf IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 6 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 30 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | DPAK-3 | Packaging : | Reel |
Technical/Catalog Information | SGR6N60UFTM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 6A |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 3A |
Power - Max | 30W |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SGR6N60UFTM SGR6N60UFTM |