DescriptionThe SGR3500GXH29 is designed as one kind of gate turn-off thyristor lower loss, reverse conducting type that can be used in inverter application. Features of the SGR3500GXH29 are:(1)repetitive peak off-state voltage: VDRM=4500 V;(2)repetitive peak reverse voltage: VRRM=17 V;(3)R.M.S. on...
SGR3500GXH29: DescriptionThe SGR3500GXH29 is designed as one kind of gate turn-off thyristor lower loss, reverse conducting type that can be used in inverter application. Features of the SGR3500GXH29 are:(1)repet...
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DescriptionFeatures of the SGR3000GXH26 are:(1)repetitive peak off-state voltage:VDRM=4500V;(2)R.M...
DescriptionThe SGR3000GXH28 is a kind of gate turn-off thyristor. SGR3000GXH28 is intended for inv...
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Aluminum Electrolytic Capacitors - Leaded 50V .33uF 105C 4x7mm
The SGR3500GXH29 is designed as one kind of gate turn-off thyristor lower loss, reverse conducting type that can be used in inverter application. Features of the SGR3500GXH29 are:(1)repetitive peak off-state voltage: VDRM=4500 V;(2)repetitive peak reverse voltage: VRRM=17 V;(3)R.M.S. on-state current: IT(RMS)=1200 A;(4)R.M.S. reverse current: IR(RMS)=900 A;(5)peak turn-off current: ITGQM= 3500 A;(6)critical rate of rise of on-state current: di/dt= 600 A/s;(7)critical rate of rise of off-state voltage: dv/dt= 1000 V/s.
The absolute maximum ratings of the SGR3500GXH29 can be summarized as:(1)repetitive peak off-state voltage: 4500 A;(2)repetitive peak reverse voltage: 17 V;(3)peak turn-off current: 3000 A;(4)R.M.S. on-state current: 900 A;(5)peak one cycle surge on-state current: 16000 A;(6)peak one cycle surge reverse current: 14000 A;(7)critical rate of rise of on-state current: 600 A/s;(8)average forward gate power dissipation: 50 W;(9)average reverse gate power dissipation: 230 W;(10)storage temperature range:-40 to +150;(11)operation junction temperature range: -40 to +125. If you want to know more information such as the electrical characteristics about the SGR3500GXH29, please download the datasheet in www.seekic.com or www.chinaicmart.com.