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SGR2N60UFDTM

IGBT Transistors Dis High Perf IGBT

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SeekIC No. : 00143892 Detail

SGR2N60UFDTM: IGBT Transistors Dis High Perf IGBT

SGR2N60UFDTM Data Sheet

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Part Number:
SGR2N60UFDTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 2.4 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 25 W Maximum Operating Temperature : + 150 C
Package / Case : DPAK-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 25 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : DPAK-3
Continuous Collector Current at 25 C : 2.4 A


Parameters:

Technical/Catalog InformationSGR2N60UFDTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)2.4A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 1.2A
Power - Max25W
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGR2N60UFDTM
SGR2N60UFDTM



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