IGBT Transistors Dis IGBT
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 3.7 V @ IC = 40...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1500 V | ||
Collector-Emitter Saturation Voltage : | 3.7 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
Continuous Collector Current at 25 C : | 40 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 200 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-264-3 | Packaging : | Tube |