SGH80N60UFTU, US $ 2.06-2.83 , Fairchild Semiconductor, SGH80N60UFTU DataSheet download, circuit diagram from SeekIC.com

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SGH80N60UFTU: IGBT Transistors Dis High Perf IGBT

SGH80N60UFTU Data Sheet

US $ 2.06~2.83 / Piece | Get Latest Price

Part Number:: SGH80N60UFTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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$2.83
$2.6
$2.37
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Upload time: 2024/11/6

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SGH80N60UF evaluate
Features: • High speed switching• Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A&...
SGH80N60UFD evaluate
Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 40...
SGH80N60UFDTU evaluate
US $2.6 - 3.56 / Piece

IGBT Transistors N-CH/100V/0.58/28A

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	2.1 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	80 A	Gate-Emitter Leakage Current :	+/- 100 nA
Power Dissipation :	195 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-3P-3	Packaging :	Tube

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-3P-3
Power Dissipation : 195 W

Parameters:

Technical/Catalog Information	SGH80N60UFTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 40A
Power - Max	195W
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGH80N60UFTU SGH80N60UFTU

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SGH80N60UFTU

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