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SGH10N120RUFDTU

IGBT Transistors

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SeekIC No. : 00143847 Detail

SGH10N120RUFDTU: IGBT Transistors

SGH10N120RUFDTU Data Sheet

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Part Number:
SGH10N120RUFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3 V Maximum Gate Emitter Voltage : +/- 25 V
Continuous Collector Current at 25 C : 16 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 125 W Maximum Operating Temperature : + 150 C
Package / Case : TO-3P-3 Packaging : Tube    

Description

Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V
Continuous Collector Current at 25 C : 16 A
Package / Case : TO-3P-3
Collector-Emitter Saturation Voltage : 3 V


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