Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A• High Input ImpedanceApplicationSwitching Power Supply - High Input Voltage Off-line ConverterSpecifications Parameter Unit Value Unit DC Supply Voltage note 1 VDD 30...
SGF5N150UF: Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A• High Input ImpedanceApplicationSwitching Power Supply - High Input Voltage Off-line Converter...
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Parameter |
Unit |
Value |
Unit | |
DC Supply Voltage note 1 |
VDD |
30 32 10 |
V V mA | |
Gate Output Current |
VFB |
500 |
V | |
Input Voltage to FB Pin |
VSense |
-0.3 to 7 V |
V | |
Input Voltage to Sense Pin |
Pd |
-0.3 to 7V |
mW | |
Input Voltage to RT Pin |
TJ |
-0.3 to 7V |
||
Operating Junction Temperature |
RJA |
-0.3 to 7V |
°C/W | |
82.5 |
.C | |||
Operating Ambient Temperature |
Tstg |
-25 to 85 |
°C | |
Storage Temperature Range |
TL |
-25 to 85 |
°C | |
ESD Capability, HBM model |
3.0 |
kV | ||
ESD Capability, Machine model |
250 |
V |
Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications.