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SGB30N60

IGBT Transistors FAST IGBT NPT TECH 600V 30A

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SeekIC No. : 00143252 Detail

SGB30N60: IGBT Transistors FAST IGBT NPT TECH 600V 30A

SGB30N60 Data Sheet

floor Price/Ceiling Price

US $ 1.11~1.45 / Piece | Get Latest Price
Part Number:
SGB30N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~605
  • 605~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.45
  • $1.22
  • $1.15
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Features:

• 75% lower Eoff compared to previous generationcombined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
41
30
A
Pulsed collector current, tp limited by Tjmax
I Cpul s
112
Turn off safe operating area
VCE 600V, Tj 150°C
-
112
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS
165
mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
µs
Power dissipation
TC = 25°C
P t o t
350
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C



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