SG800GXH24

The SG800GXH24 is a kind of gate turn-off thyristor. It is intended for inverter application. There are some features as follows: (1)repetitive peak off-state voltage: VDRM=4500 V; (2)RMS on-state current: IT(RMS)=300 A; (3)peak turn-off current: ITGQM=800 A; (4)critical rate of rise of on-state current: di/dt=200 A/s; (5)critical rate of rise of on-state voltage: dv/dt=900 V/s.

The following is about the maximum ratings of SG800GXH24: (1)repetitive peak off-state voltage, VDRM: 4500 V; (2)repetitive peak reverse voltage, VRRM: 16 V; (3)peak turn-off current, ITGQM: 800 A; (4)RMS on-state current, IT(RMS): 300 A; (5)peak one cycle surge on-state current (non-repetitive, 10 ms width half sine waveform), ITSM: 6000 A; (6)critical rate of rise of on-state current, di/dt: 200 A/s; (7)peak gate current, IGM: 280 A; (8)average gate power dissipation, PG(AV): 55 W; (9)RMS gate current, IG(RMS): 35 A; (10)peak reverse gate voltage (at static), VRGM: 16 V; (11)operating junction temperature range, Tj: -40 to 125; (12)storage temperature range, Tstg: -40 to 150.

The last one is about the electrical characteristicsof SG800GXH24 : (1)repetitive peak off-state current, IDRM: 40 mA max at VDRM=4500 V, VGK=-2 V, Tj=125; (2)repetitive peak reverse current, IRRM: 10 mA max at VRRM=16 V, Tj=125; (3)repetitive peak reverse gate current, IRGM: 10 mA max at VRGM=16 V, Tj=125; (4)peak on-state voltage, VTM: 3.3 V max at ITM=800 A, Tj=125; (5)gate trigger voltage at VD=24 V, RL=0.1, VGT: 1.5 V max at Tj=-40 and 1.2 V max at Tj=25; (6)gate trigger current at VD=24 V, RL=0.1, IGT: 3 A max at Tj=-40 and 1 A max at Tj=25.