SG6101

Breakdown Voltage (VBR) ....................................................75V
Output Current (IO), TC = 25°C
Continuous .................................................................300mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................150°C
Storage Temperature Range ............................-65°C to 200°C
Lead Temperature (Soldering, 10 seconds) ..................300°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.

The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes.

The SG6101 configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and cathode connections the device may be used in a variety of applications. Also, due to the array's monolithic construction the diode electrical parameters are very closely matched.

The SG6101 is available in ceramic DIP and flatpack and can be processed to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.