SG107F3

The SG107F3 is designed as one kind of reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini package, raducing installation space. And the features of this device are:(1)PWB direct mount type;(2)the most suitable detection distance: 0.8 mm;(3)visible light cut-off type;(4)low profile. And this device can be used in wide range of applications such as (1)cassette mecha; (2)cameras; (3)mini printers; (4)VTR.

The absolute maximum ratings of the SG107F3 can be summarized as:(1)power dissipation: 75 mW;(2)forward current: 50 mA;(3)reverse voltage: 5 V;(4)pulse forward current: - A;(5)collector power dissipation: 50 mW;(6)collector current: 20 mA;(7)collector-emitter voltage: 30 V;(8)emitter-collector voltage: 5 V;(9)operating temperature: -20 to +85 ;(10)storage temperature: -30 to +100 ;(11)soldering temperature: 240 .

The electrical characteristics of SG107F3 can be summarized as:(1)forward voltage: 1.3 V;(2)reverse current: 10 uA;(3)peak wavelength: 940 nm;(4)collector dark current: 0.2 uA;(5)light current: 35 to 200 uA;(6)leakage current: 0.2 uA;(7)rise time: 30 us;(8)fall time: 25 us. If you want to know more information such as the electrical characteristics about the SG107F3, please download the datasheet in www.seekic.com or www.chinaicmart.com.