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SFX9130J

Features: · Rugged construction with polysilicon gate· Low ON-resistance and high transconductance· Excellent high temperature stability· Hermetically Sealed, Isolated Package· Low Total Gate Charge· Fast Switching· replacement for IRF9130 types· TX, TXV, S-Level screening availableSpecifications ...

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SeekIC No. : 004488848 Detail

SFX9130J: Features: · Rugged construction with polysilicon gate· Low ON-resistance and high transconductance· Excellent high temperature stability· Hermetically Sealed, Isolated Package· Low Total Gate Charge...

SFX9130J Data Sheet

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Part Number:
SFX9130J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Rugged construction with polysilicon gate
· Low ON-resistance and high transconductance
· Excellent high temperature stability
· Hermetically Sealed, Isolated Package
· Low Total Gate Charge
· Fast Switching
· replacement for IRF9130 types
· TX, TXV, S-Level screening available


Specifications

Electrical Characteristics

Symbol

Value

Units

Drain - Source Voltage

VDSS

-100

V

Gate Source Voltage

VGS

±20

V

Max. Continuous Drain Current (package limited) @ TC = 25ºC
                                                                            @ TC = 100ºC

ID1
ID2

10
7

A

Max. Avalanche current @ L= 5.0 mH

IAR

9.8

A

Repetitive Avalanche Energy @ L= 5.0 mH

EAR

5.2

mJ

Single Pulse Avalanche Energy @ L= 5.0 mH

EAS

320

mJ

Total Power Dissipation @ TC = 25ºC

PD

75

W

Operating & Storage Temperature

TOP & TSTG

-55 to +150

ºC

Maximum Thermal Resistance (Junction to Case)

R0JC

1.65

ºC/W




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