Features: · Rugged construction with polysilicon gate· Low ON-resistance and high transconductance· Excellent high temperature stability· Hermetically Sealed, Isolated Package· Low Total Gate Charge· Fast Switching· replacement for IRF9130 types· TX, TXV, S-Level screening availableSpecifications ...
SFX9130J: Features: · Rugged construction with polysilicon gate· Low ON-resistance and high transconductance· Excellent high temperature stability· Hermetically Sealed, Isolated Package· Low Total Gate Charge...
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Electrical Characteristics |
Symbol |
Value |
Units |
Drain - Source Voltage |
VDSS |
-100 |
V |
Gate Source Voltage |
VGS |
±20 |
V |
Max. Continuous Drain Current (package limited) @ TC = 25ºC |
ID1 |
10 |
A |
Max. Avalanche current @ L= 5.0 mH |
IAR |
9.8 |
A |
Repetitive Avalanche Energy @ L= 5.0 mH |
EAR |
5.2 |
mJ |
Single Pulse Avalanche Energy @ L= 5.0 mH |
EAS |
320 |
mJ |
Total Power Dissipation @ TC = 25ºC |
PD |
75 |
W |
Operating & Storage Temperature |
TOP & TSTG |
-55 to +150 |
ºC |
Maximum Thermal Resistance (Junction to Case) |
R0JC |
1.65 |
ºC/W |