Features: • Low noise InGaP HBT technology• Differential transimpedance ~ 2200 • +5.0V power supply• High sensitivity <• Adjustable dynamic range• Low duty-cycle distortion• Differential Outputs• Photo current monitor• Patented DCDR circuit&...
SFT-0100: Features: • Low noise InGaP HBT technology• Differential transimpedance ~ 2200 • +5.0V power supply• High sensitivity <• Adjustable dynamic range• Low duty-cyc...
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Parameters |
Value |
Unit |
Supply Current (ICC) |
60 |
mA |
Device Voltage (VCC) |
6.0 |
V |
Maximum DC Input Current |
5.0 |
mA |
Operating Temperature (TOP) |
0 to +85 |
ºC |
Storage Temperature Range |
-40 to +150 |
ºC |
Operating Junction Temperature (TJ) |
+150 |
ºC |
Series | SFT |
Frequency (MHz) | 1050 |
Gain (dB) | 27.5 |
Vd (V) | 1.45 |
Vcc (V) | 5.0 |
Icc (mA) | 52 |
Sirenza Microdevices' SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that delivers high transimpedance, large dynamic range, and a typical bandwidth greater than 10.5GHz.
Performance is enhanced through the use of a patented circuit topology that reduces duty cycle distortion under high photocurrent conditions and allows high transimpedance with low DC power to be realized. The SFT-0100 is supplied in bare die form and includes a current monitor feature that can be used for fiber alignment or loss of signal (LOS) detection.