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SFR301

Features: · Diffused Junction· Low Forward Voltage Drop· High Current Capability· High Reliability· High Surge Current CapabilitySpecificationsSingle Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%. RATINGS Symbols SFR301 SFR302 SFR303...

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SeekIC No. : 004488729 Detail

SFR301: Features: · Diffused Junction· Low Forward Voltage Drop· High Current Capability· High Reliability· High Surge Current CapabilitySpecificationsSingle Phase, half wave, 60Hz, resistive or inductive l...

SFR301 Data Sheet

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Part Number:
SFR301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused Junction
· Low Forward Voltage Drop
· High Current Capability
· High Reliability
· High Surge Current Capability




Specifications

Single Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
RATINGS
 Symbols
SFR301
 SFR302 SFR303 SFR304 SFR305 SFR306 SFR307 Units
Maximum repetitive peakreverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS volts
VRWM
50
100
200
400
600
800
1000
V
Maximum DC Blocking Voltage
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage

VR(RMS)
30
70
140
280
420
560
700
V
Maximum average forward current
0.375" (9.5mm) lead length at TA=55
IO
3.0
A
Peak forward surge current, IFM (surge):
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
IFSM
150
A
Maximum forward voltage at@IF=3.0A
VFM
1.2
V
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=100
IRM
5.0
100.0
A
Reverse Recovery Time (Note 2)
Trr
120
200
350
ns
Typical Junction Capacitance (Note 3)
Cj
60
pF
Operating Temperature Range
TJ
-65 to +125
storage temperature range
TSTG
-65 to +150

*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
          2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
          3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.




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