Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = -100V` Lower RDS(ON) : 0.912 (Typ.)Specifications Symbol Characteristic Value Units ...
SFM9110: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = -100V`...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
-100 |
V |
ID |
Continuous Drain Current (TA=25) |
-1.0 |
A |
Continuous Drain Current (TA=70) |
-0.7 | ||
IDM |
Drain Current-Pulsed |
-8.0 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
53 |
mJ |
IAR |
Avalanche Current |
-1.0 |
A |
EAR |
Repetitive Avalanche Energy |
0.25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-6.5 |
V/ns |
PD |
Total Power Dissipation (TA=25) * Linear Derating Factor * |
2.52 0.02 |
W W/°C |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |