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SFH9250L

MOSFET P-Ch/LL/200V/19.5a 0.23Ohm/VGS=5V

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SeekIC No. : 00161325 Detail

SFH9250L: MOSFET P-Ch/LL/200V/19.5a 0.23Ohm/VGS=5V

SFH9250L Data Sheet

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Part Number:
SFH9250L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19.5 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-3P
Drain-Source Breakdown Voltage : - 200 V
Continuous Drain Current : 19.5 A
Resistance Drain-Source RDS (on) : 0.23 Ohms


Features:

❑ Logic-Level Gate Drive
❑ Avalanche Rugged Technology
❑ Rugged Gate Oxide Technology
❑ Lower Input Capacitances
❑ Improved Gate Charge
❑ Extended Safe Operating Area
❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V
❑ Lower RDS(ON) : 0.175 (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
-200
V
ID
 Continuous Drain Current (TC=25oC)
-19.5
A
Continuous Drain Current (TC=100oC)
-12.3
IDM
 Drain Current-Pulsed
1
-78
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
2
990
mJ
IAR
 Avalanche Current
1

-19.5
A
EAR
 Repetitive Avalanche Energy
1
20.4
mJ
dv/dt
 Peak Diode Recovery dv/dt
3

-5.0
V/ns
PD
 Total Power Dissipation (TC=25oC)
Linear Derating Factor
204
1.63
W
W/oC
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
oC
TL
 Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
300



Parameters:

Technical/Catalog InformationSFH9250L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C19.5A
Rds On (Max) @ Id, Vgs230 mOhm @ 9.8A, 5V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max204W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 5V
Package / CaseTO-3P
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SFH9250L
SFH9250L



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