Features: ·GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process· High reliability·High radiant intensity·High pulse handling capability·Available in groups·Same package as SFH 305Application·Miniature photointerrupt·Punched tape-readers· Industrial electronics·For control and...
SFH405: Features: ·GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process· High reliability·High radiant intensity·High pulse handling capability·Available in groups·Same package as SFH ...
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Bezeichnung Description |
Symbol Symbol |
Wert Value |
Einheit Unit |
Betriebs- und Lagertemperatur Operating and storage temperature range |
Top; Tstg | 40 ... + 80 | °C |
Sperrschichttemperatur Junction temperature |
Tj | 80 | °C |
Sperrspannung Reverse voltage |
VR | 5 | V |
Durchla?strom Forward current |
IF | 40 | mA |
Stobstrom, tp = 10 ms, D = 0 Surge current |
IFSM | 1.6 | A |
Verlustleistung Power dissipation |
Ptot | 65 | mW |
W?rmewiderstand Thermal resistance |
RthJA RthJC |
950 850 |
K/W K/W |