DescriptionThe SFH2012A is a planar silicon PIN-photo diodes. The cathode and anode are electrically isolated from the case. The features of the SFH2012A are: (1)TO-18 hermetic package; (2)isolated case; (3)flat glass lens; (4)for fiber optic communications. The following is about the absolute ma...
SFH2012A: DescriptionThe SFH2012A is a planar silicon PIN-photo diodes. The cathode and anode are electrically isolated from the case. The features of the SFH2012A are: (1)TO-18 hermetic package; (2)isolated ...
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The SFH2012A is a planar silicon PIN-photo diodes. The cathode and anode are electrically isolated from the case. The features of the SFH2012A are: (1)TO-18 hermetic package; (2)isolated case; (3)flat glass lens; (4)for fiber optic communications.
The following is about the absolute maximum ratings of SFH2012A: (1)storage temperature range: -40 to +80; (2)reverse voltage: 50V; (3)junction temperature: 80.
The electrical characteristics of the SFH2012A are: (1)wavelength of max sensitivity: 850nm; (2)radiant sensitive area: 1 mm2; (3)dark current: 1(5)nA; (4)spectral sensitivity: 0.55A/W; (5)quantum yield: 0.80; (6)rise time of the photocurrent(RL=50, VR=20V, =850nm): 0.5(1); (7)cut-off frequency: 500 MHz; (8)capacitance: 13pF; (9)noise equivalent power(VR=20V): 33x10-14.