Features: • Rugged construction with polysilicon gate• Low RDS (on) and high transconductance• Excellent high temperature stability• Very fast switching speed• Fast recovery and superior dv/dt performance• Increased reverse energy capability• Low input and...
SFF054M: Features: • Rugged construction with polysilicon gate• Low RDS (on) and high transconductance• Excellent high temperature stability• Very fast switching speed• Fast rec...
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Maximum Ratings |
Symbol |
Value |
Units |
Drain to Source Voltage |
VDS |
60 |
Volts |
Gate to Source Voltage |
VGS |
±20 |
Volts |
Continuous Drain Current |
ID |
35 |
Amps |
Operating & Storage Temperature |
Top & Tstg |
-55 to +150 |
ºC |
Thermal Resistance, Junction to Case |
RJC |
0.83 |
ºC/W |
Total Device Dissipation TC = 25ºC |
PD |
150 |
Watts |