DescriptionThe SFC05-41 is a quad flip chip CSP TVS diode array. They are state-of-the-art devices that utilize solid-state silicon-avalanche techology for superior clamping performance and DC electrical characteristics. The features of the SFC05-41 are: (1)300W peak pulse power; (2)transient prot...
SFC05-41: DescriptionThe SFC05-41 is a quad flip chip CSP TVS diode array. They are state-of-the-art devices that utilize solid-state silicon-avalanche techology for superior clamping performance and DC elect...
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The SFC05-41 is a quad flip chip CSP TVS diode array. They are state-of-the-art devices that utilize solid-state silicon-avalanche techology for superior clamping performance and DC electrical characteristics. The features of the SFC05-41 are: (1)300W peak pulse power; (2)transient protection for data lines to IEC 61000-4-2(ESD) 15kV, 8kV(contact); (3)small chip scale package requires less board space; (4)low profile(<0.65mm); (5)no need for underfill material; (6)protects four I/O or data lines; (7)low clamping voltage: 5V; (8)solid-state silicon-avalanche technology.
The following is about the absolute maximum ratings of SFC05-41: (1)peak pulse power(tp=8/20s): 300W; (2)peak pulse current(tp=8/20s): 24A; (3)ESD per IEC 61000-4-2(Air): >25kV; (4)ESD per IEC 61000-4-2(Contact): >15kV; (5)soldering temperature: 260; (6)operating temperature: -55 to 125; (7)storage temperature: -55 to 150.
The electrical characteristics of the SFC05-41 are: (1)reverse stand-off voltage: 5V max; (2)reverse breakdown voltage:6V min at It=1mA; (3)reverse leakage current: 10A max at VRWM=5V, T=25; (4)clamping voltage: 9.5V max at Ipp=5A, tp=8/20s; (5)clamping voltage: 11V max at Ipp=24A, tp=8/20s; (6)junction capacitance: 350pF max at VR=0V, f=1MHz.