DescriptionThe SF2500EX22 is a kind of thyristor designed for high power control applications. The device has the following features:(1)repetitive peak off-state voltage: VDRM=2500 V; (2)repetitive peak reverse voltage:VRRM=2500 V; (3)average on-state current: IT(AV)=2500 A;(4) flat package; (5)cr...
SF2500EX22: DescriptionThe SF2500EX22 is a kind of thyristor designed for high power control applications. The device has the following features:(1)repetitive peak off-state voltage: VDRM=2500 V; (2)repetitive ...
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DescriptionThe SF2500EX23 is designed for high power control applications.Before ordering, purchas...
The SF2500EX22 is a kind of thyristor designed for high power control applications. The device has the following features:(1)repetitive peak off-state voltage: VDRM=2500 V; (2)repetitive peak reverse voltage:VRRM=2500 V; (3)average on-state current: IT(AV)=2500 A;(4) flat package; (5)critical rate of rise of on-state current: di/dt=250 A/s; (6)critical rate of rise of off-state voltage: dv/dt=1500 V/s; (7)turn-off time: tq=400s(max).
The following is about the SF2500EX22 absolute maximum ratings: (1)repetitive peak off-state voltage and repetitive peak reverse voltage, VDRM, VRRM: 2500 V; (2)non-repetitive peak reverse voltage (non-repetitive<5 ms, Tj=0 to 125), VRSM: 2750 V; (3)RMS on-state current, IT(RMS); 3925 A; (4)average on-state current, IT(AV): 2500 A; (5)peak one cycle surge on-state current (non-repetitive), ITSM: 45000 A (50 Hz) and 50000 A (60 Hz); (6)critical rate of rise of on-state current, di/dt: 250 A/s; (7)peak gate power dissipation, PGM: 30 W; (8)average gate power dissipation, PG(AV): 30 W ; (9)peak forward gate current, IGM: 6 A; (10)peak forward gate voltage, VFGM: 30 V; (11)peak reverse gate voltage, VRGM: 5 V; (12)junction temperature, Tj: -40 to 125; (13)storage temperature, Tstg: -40 to 125.
The last one is about the SF2500EX22 electrical characteristics: (1)repetitive peak off-state voltage and repetitive peak reverse current, IDRM, IRRM: 120 mA when VDRM=VRRM=rated, Tj=125; (2)peak on-state voltage, VTM: 1.82 V max at ITM=8000 A, Tj=125; (3)gate trigger voltage, VGT: 4.0 V max at VD=12 V, RL=6, Tj=-40 and 2.5 V max at VD=12 V, RL=6, Tj=25; (4)gate trigger current, IGT: 400 mA max at VD=12 V, RL=6, Tj=-40 and 250 mA max at VD=12 V, RL=6, Tj=25; (5)gate non-trigger voltage, VGD: 0.2 V min at VD=1/2 rated, Tj=125 ; (6)gate non-trigger current, IGD: 5 mA min at VD=1/2 rated, Tj=125.