Features: `ID=100A, VDSS=1000V`Suitable for high speed switching applications.`Low ON resistance.`Wide Safe Operating Areas.`trr300ns fast recovery diode for free wheelSpecifications Symbol Item Conditions Ratings Unit SF100CB100 VDSS Drain-Source Voltage 1000 V...
SF100CB100: Features: `ID=100A, VDSS=1000V`Suitable for high speed switching applications.`Low ON resistance.`Wide Safe Operating Areas.`trr300ns fast recovery diode for free wheelSpecifications Symbol ...
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DescriptionThe SF1000GX24 is designed for high power control applications.TOSHIBA is continually w...
Symbol |
Item |
Conditions |
Ratings |
Unit | |
SF100CB100 | |||||
VDSS | Drain-Source Voltage |
1000 |
V | ||
VGSS | Gate-Source Voltage |
±30 |
V | ||
ID | Drain Current |
DC |
100 |
A | |
IDP | Pulse |
200 | |||
-ID | Source Current |
100 |
A | ||
PT | Total Power Dissipation | Tc=25 |
800 |
W | |
Tj | Channel Temperature |
-40to+150 |
|||
Tstg | Storage Temperature |
-40to+125 |
|||
VISO | Isolation VoltageR.M.S. | A.C. 1minute |
2500 |
V | |
Mounting Torque |
Mounting(M6) |
Recommended Value 2.5-3.9(25-40) |
4.7(48) |
N`m kgf`cm | |
Terminal(M6) | Recommended Value 2.5-3.9(25-40) |
4.7(48) | |||
Terminal(M4) | Recommended Value 1.0-1.4(10-14) |
1.5(15) | |||
Mass | Typical Value |
460 |
g |
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diodetrr300ns reverse connected.The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.