Features: · Low forward voltage drop· High current capability· High reliability· High surge current capabilitySpecificationsRating at 25ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20% RAT...
SF1004G-Q1: Features: · Low forward voltage drop· High current capability· High reliability· High surge current capabilitySpecificationsRating at 25ambient temperature unless otherwise specified.Single phase, h...
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DescriptionThe SF1000GX24 is designed for high power control applications.TOSHIBA is continually w...
Rating at 25ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%
RATINGS |
Symbols |
SF1004G-Q1 |
Units |
Maximum repetitive peakreverse voltage |
VRRM
|
200 |
V |
Maximum RMS volts |
VRMS |
140 |
V |
Maximum DC Blocking Voltage |
VDC |
200 |
V |
Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TC = 100 |
I(AV) |
10.0 |
A |
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) |
IFSM |
125 |
A |
Forward Voltage @5.0A @10.0A |
VF |
1.1 1.25 |
V |
Maximum DC Reverse Current at Rated DC Blocking Voltage@ TA=25 @ TA=100 |
IR |
10.0 500 |
A |
Reverse Recovery Charge(Per Diode) @IF=2A, VR30V,-dIF/dt=20A/uS |
QS |
9 |
NC |
Thermal Resistance Junction to Case(Note3) |
RJC |
3.0 |
/W |
Rating for Fusing (t < 8.3mS) |
I2t |
65 |
A2S |
Maximum Reverse Recovery Time (Note 1) |
Trr |
25 |
ns |
Typical Junction Capacitance (Note 2) |
Cj |
10 |
pF |
Operating Temperature Range |
TJ |
-50to+150 |
|
Storage Temperature Range |
TSTG |
-50to+150 |