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SF1004G-Q1

Features: · Low forward voltage drop· High current capability· High reliability· High surge current capabilitySpecificationsRating at 25ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20% RAT...

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SF1004G-Q1: Features: · Low forward voltage drop· High current capability· High reliability· High surge current capabilitySpecificationsRating at 25ambient temperature unless otherwise specified.Single phase, h...

SF1004G-Q1 Data Sheet

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Part Number:
SF1004G-Q1
Supply Ability:
5000

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Product Details

Description



Features:

· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability


Specifications

Rating at 25ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%

RATINGS
 Symbols
SF1004G-Q1
 Units
Maximum repetitive peakreverse voltage
VRRM
200
V
Maximum RMS volts
VRMS
140
V
Maximum DC Blocking Voltage
VDC
200
V
Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TC = 100
I(AV)
10.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
IFSM
125
A
Forward Voltage @5.0A
@10.0A
VF
1.1
1.25
V
Maximum DC Reverse Current at Rated DC Blocking Voltage@ TA=25
@ TA=100
IR
10.0
500
A
Reverse Recovery Charge(Per Diode)
@IF=2A, VR30V,-dIF/dt=20A/uS
QS
9
NC
Thermal Resistance Junction to Case(Note3)
RJC
3.0
/W
Rating for Fusing (t < 8.3mS)
I2t
65
A2S
Maximum Reverse Recovery Time (Note 1)
Trr
25
ns
Typical Junction Capacitance (Note 2)
Cj
10
pF
Operating Temperature Range
TJ
-50to+150
Storage Temperature Range
TSTG
-50to+150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
           2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
           3. Thermal Resistance from Junction to Case Mounted on Heatsink. Size of 2 in x 3 in x 0.25 in, Al-Plate.


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