SEMiX 653GB176HDs

The SEMiX 653GB176HDs is a product of Trench IGBT Modules.

Features of The SEMiX 653GB176HDs are:(1)Homogeneous Si;(2)Trench = Trenchgate technology;(3)VCE(sat) with positive temperature coefficient;(4)UL recognised file no. E63532;(5);(6);(7);(8);(9);(10).

The absolute maximum ratings of The SEMiX 653GB176HDs can be summarized as:IGBT:(1)VCES:1700 V;(2)IC,Tj = 150 °C,Tc = 25 °C:619 A;(3)IC,Tj = 150 °CTc = 80 °C:438 A;(4)ICnom:450 A;(5)ICRM ,ICRM = 2xICnom:900 A;(6)VGES:-20 ... 20 V;(7)tpsc,VCC = 1000 V,Tj = 125 °C:10 s;(8)tpsc,VGE 20 V,Tj = 125 °C:10 s;(9)tpsc,VCES 1700 V,Tj = 125 °C:10 s;(10)Tj:-55 ... 150 °C.Inverse diode:(1)IF,Tj = 150 °C,Tc = 25 °C:545 A;(2)IF,Tj = 150 °C,Tc = 80 °C:365 A;(3)IFnom:450 A;(4)IFRM,IFRM = 2xIFnom:900 A;(5)IFSM,tp = 10 ms, sin 180°, Tj = 25 °C:2900 A;(6)Tj:-40 ... 150 °C;Module:(1)It(RMS):600 A;(2)Tstg:-40 ... 125 °C;(3)Visol, AC sinus 50Hz, t = 1 min:4000 V;