DescriptionThe SE307-C is a GaAs infrared emitting diode which is mounted on the lead frames and molded in plastic.It emits a spectrally narrow band of radiation peaking at 940nm. Features of the SE307-C are:(1)economical;(2)high output power;(3)long life;(4)good linearity;(5)spectrally matched t...
SE307-C: DescriptionThe SE307-C is a GaAs infrared emitting diode which is mounted on the lead frames and molded in plastic.It emits a spectrally narrow band of radiation peaking at 940nm. Features of the S...
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The SE307-C is a GaAs infrared emitting diode which is mounted on the lead frames and molded in plastic.It emits a spectrally narrow band of radiation peaking at 940nm.
Features of the SE307-C are:(1)economical;(2)high output power;(3)long life;(4)good linearity;(5)spectrally matched to silicon sensors;(6)long lead.
The absolute maximum ratings of the SE307-C can be summarized as:(1)maximum power dissipation:150mW;(2)maximum forward current:100mA;(3)maximum reverse voltage:5.0V;(4)junction temperature:100;(5)storage temperature:-40 to +100;(6)maximum pulse forward current:1.0A;(7)operating temperature:-30 to +85.
If you want to know more information such as the electrical characteristics about the SE307-C, please download the datasheet in www.seekic.com or www.chinaicmart.com .