DescriptionThe SE301A is a GaAs infrared emitting diode which is mounted on a TO-18 hermerically sealed header with a glass lens.It emits spectrally narrow band of radiation peaking at 940nm.Its low cost volume producibility open new areas of use anywhere an infrared source is desirable. Features...
SE301A: DescriptionThe SE301A is a GaAs infrared emitting diode which is mounted on a TO-18 hermerically sealed header with a glass lens.It emits spectrally narrow band of radiation peaking at 940nm.Its low...
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The SE301A is a GaAs infrared emitting diode which is mounted on a TO-18 hermerically sealed header with a glass lens.It emits spectrally narrow band of radiation peaking at 940nm.Its low cost volume producibility open new areas of use anywhere an infrared source is desirable.
Features of the SE301A are:(1)low cost;(2)high output power:3mW(min.);(3)fast swithching time;(4)long life-solid state reliability;(5)compact, rugged, lightweight;(6)spectrally matched to silicon sensors.
The absolute maximum ratings of the SE301A can be summarized as:(1)maximum power dissipation:150mW;(2)maximum forward current:100mA;(3)maximum reverse voltage:5.0V;(4)junction temperature:125;(5)storage temperature:-65 to +125;(6)maximum pulse forward current:1.0A.
If you want to know more information such as the electrical characteristics about the SE301A, please download the datasheet in www.seekic.com or www.chinaicmart.com .