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SDP/B65N03L

Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ TJ=1...

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SeekIC No. : 004487099 Detail

SDP/B65N03L: Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain...

SDP/B65N03L Data Sheet

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Part Number:
SDP/B65N03L
Supply Ability:
5000

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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.


Specifications

Parameter Symbol Limit Unit
Drain-S ource Voltage VDS 30 V
Gate-S ource Voltage VGS ±20 V
Drain Current-Continuous @ TJ=125 -Pulseda ID 65 A
IDM 195 A
Drain-S ource Diode Forward Current IS 65 A
Maximum Power Dissipation @ Tc=25Derate above 25 PD 75 W
0.5 W/
Operating and S torage Temperature R ange TJ , TSTG -65 to 175
THE RMAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case R JC 2 /W
Thermal R esistance, Junction-to-Ambient R JA 62.5 /W



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