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SDM-09060-B1FY

Features: • Available in RoHS compliant packaging• 50 W RF impedance• 65W Output P1dB • Single Supply Operation : Nominally 28V• High Gain: 17 dB at 942 MHz• High Efficiency : 44% at 942 MHz• ESD Protection: JEDEC Class 2 (2000V HBM)Application• Base...

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SDM-09060-B1FY: Features: • Available in RoHS compliant packaging• 50 W RF impedance• 65W Output P1dB • Single Supply Operation : Nominally 28V• High Gain: 17 dB at 942 MHz• High...

SDM-09060-B1FY Data Sheet

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Part Number:
SDM-09060-B1FY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

• Available in RoHS compliant packaging
• 50 W RF impedance
• 65W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 17 dB at 942 MHz
• High Efficiency : 44% at 942 MHz
• ESD Protection: JEDEC Class 2 (2000V HBM)


Application

• Base Station PA driver
• Repeater
• CDMA
• GSM / EDGE


Specifications

Parameters
Value
Unit
Drain Voltage (VDD)
35
V
RF Input Power
+37
dBm
Load Impedance for Continuous Operation
Without Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
15
V
Output Device Channel Temperature
+200
ºC
Operating Temperature Range
-20 to +90
ºC
Storage Temperature Range
-40 to +100
ºC
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation see typical setup values
specified in the table on page one.


Description

Sirenza Microdevices' SDM-09060-B1FY  65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-tounit repeatability. It is internally matched to 50 ohms.




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