Features: SpecificationsDescriptionSDF9210 is a kind of N-Channel enhancement-mode D-MOS FET switch.There are some features as follows.First is high input to output isolation-120 dB typical.The second is low feedthrough and feedback transients.The last one is low inter-electrode capacitances.The t...
SDF9210: Features: SpecificationsDescriptionSDF9210 is a kind of N-Channel enhancement-mode D-MOS FET switch.There are some features as follows.First is high input to output isolation-120 dB typical.The seco...
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SDF9210 is a kind of N-Channel enhancement-mode D-MOS FET switch.There are some features as follows.First is high input to output isolation-120 dB typical.The second is low feedthrough and feedback transients.The last one is low inter-electrode capacitances.The typical applications include ±15 V switch drives.
What comes next is about the SDF9210 absolute maximum ratings (TA=25 unless otherwise noted).The VDS is +30 Vdc.The VSD is +10 Vdc.The VDB is +30 Vdc.The VSB is +15 Vdc.The VGS is ±40 Vdc.The VGB is ±40 Vdc.The VGD is ±40 Vdc.The ID (continuous drain current) is 50 mA.The PT (power dissipation (at or below TC=+25)) is 1.2 W.The PD (power dissipation (at or below TA=+25)) is 300 mW.The Tj (operating junction temperature range) is from -55 to +125.The Ts (storage temperature range) is from -65 to +175.
The following is about the SDF9210 electrical characteristics (TA=25 unless otherwise noted).The minimum BVDS (drain-source breakdown voltage) is 30 V and the typical is 35 V at ID=10A,VGS=VBS=0.The minimum BVDS (drain-source breakdown voltage) is 10 V and the typical is 25 V at ID=10 nA,VGS=VBS=-5 V.The minimum BVSD (source-drain breakdown voltage) is 10 V at IS=10 nA,VGD=VBD=-5 V.The minimum BVSB (source-substate breakdown voltage) is 15 V at IS=10 A,VGB=0,source OPEN.The minimum BVDB (source-substate breakdown voltage) is 15 V at ID=10 A,VGB=0,source OPEN.The maximum ID (off) (drain-source OFF current) is 10 nA at VDS=10 V,VGS=VBS=-5 V.The maximum IS (off) (source-drain OFF current) is 10 nA at VSD=10 V,VGD=VBD=-5 V.The minimum VGD(th) (gate threshold voltage) is 0.5 V,the typical is 1.0 V and the maximum is 2.0 V at VDS=VGS,ID=1A,VSB=0.