SDF8304

SDF8304 is a kind of N-Channel enhancement-mode dual gate D-MOS FET.There are some features as follows.First is normally off-enhancement-mode operation.The second is dual gate with gate protective diodes.Then is low feedback capacitance which is 0.03 pF (typical).Next is wide dynamic range-remote AGC capability.The fifth is low cross-modulation distortion.The typical applications include wide band (unneutralized) VHF/UHF amplifiers and VHF/UHF linear mixers.

What comes next is about the SDF8304 absolute maximum ratings (TA=25 unless otherwise noted).The VDS (drain-source voltage) is +25 V.The VG1B (gate 1-substrate voltage) is from -0.3 to +10 V.The VG2B (gate 2-substrate voltage) is from -0.3 to +15 V.The ID (continuous drain current) is 50 mA.The PD (power dissipation (at TA=+25 (free air)) is 300 mW.The PD (power dissipation (at TC=+25 (infinite heat sink)) is 1.2 W.The power derating factor is 3.0 mW/ for free air and 12 mW/ for infinite heat sink.The Top (operating junction temperature range) is from -55 to +125.The Tstg (storage temperature range) is from -65 to +175.

The following is about the SDF8304 electrical characteristics (TA=25 unless otherwise noted).The typical IDSS (drain-source OFF leakage current) is 0.01A and the maximum is 1.0A at VDS=15 V,VG1S=VG2S=0.The typical IG1SS (gate 1 leakage current) is 1.0A and the maximum is 100 nA at VG2S=VDS=0 V,VG1S=5 V.The typical IG2SS (gate 2 leakage current) is 1.0A and the maximum is 100 nA at VG2S=VDS=0 V,VG1S=10 V.The minimum VT1 (gate 1-source threshold voltage) is 0.1 V,the typical is 1.0 V and the maximum is 2.0 V at VDS=VG1S,VG2S=10 V,ID=1A.The minimum VT2 (gate 2-source threshold voltage) is 0.1 V,the typical is 1.0 V and the maximum is 2.0 V at VDS=VG2S,VG2S=4 V,ID=1A.The typical rDS(on) (drain-source ON resistance) is 90 ohms and the maximum is 130 ohms at ID=1 mA,VG1S=5 V,VG2S=10 V.