Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous @TJ=125 -Pulseda ID 30 A IDM 90 A ...
SDD30N03L: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate...
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Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 30 | V |
Gate-Source Voltage | VGS |
±20 | V |
Drain Current-Continuous @TJ=125 -Pulseda |
ID | 30 | A |
IDM |
90 | A | |
Drain-Source Diode Forward Current | IS | 30 | A |
Maximum Power Dissipation @Tc=25 Derate above 25 |
PD |
50 | W |
0.3 | W/ | ||
Temperature Range Operating and Storage |
TJ, TSTG | -55 to 175 | |
THERMAL CHARACTERISTICS | |||
Thermal Resistance, Junction-to-Case | RJC | 3 | /W |
Thermal Resistance, Junction-to-Ambient | RJA |
50 | /W |