Features: • Low power rectified• Silicon epitaxial type• High reliability• Low IR (IR=10uA Typ)PinoutSpecifications Characteristic Symbol Ratings Unit Peak reverse voltage VRM 40 V Reverse voltage VR 40 V Forward current IF 1.0...
SDB1040: Features: • Low power rectified• Silicon epitaxial type• High reliability• Low IR (IR=10uA Typ)PinoutSpecifications Characteristic Symbol Ratings Unit Peak r...
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Features: • Dual chip common cathode• Low forward voltage & low reverse current...
Characteristic |
Symbol |
Ratings |
Unit |
Peak reverse voltage |
VRM |
40 |
V |
Reverse voltage |
VR |
40 |
V |
Forward current |
IF |
1.0 |
A |
Non-repetitive peak forward current |
IFSM |
3 |
A |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-55 ~ 150 |
°C |
High Current Capability and Low Forward Voltage Drop SDB1040 |
SDB1040 is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also SDB1040 provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications |