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SD850CS

Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity ProtectionApplications Specifications Characte...

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SD850CS: Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High ...

SD850CS Data Sheet

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Part Number:
SD850CS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications


Specifications

Characteristic Symbol SD
820CS		 SD
830CS		 SD
840CS		 SD
850CS		 SD
860CS		 SD
880CS		 SD
8100CS		 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 20 30 40 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V
Average Rectified Output Current @TL = 85°C IO 8.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)		 IFSM 85 A
Forward Voltage (Note 1) @IF = 4.0A VFM 0.65 0.75 0.85 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C		 IRM 0.2
20		 mA
Typical Junction Capacitance (Note 2) Cj 400 pF
Typical Thermal Resistance Junction to Ambient RJA 60 K/W
Operating Temperature Range Tj -50 to +125 °C
Storage Temperature Range TSTG -50 to +150 °C



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