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SD5000

Features: · GOLD METALLIZATION· EMITTER SITE BALLASTING· INTERNAL INPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC PACKAGE· COMMON EMITTER CONFIGURATION· POUT =1.5 W MIN. WITH 9.5 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCE...

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SeekIC No. : 004486596 Detail

SD5000: Features: · GOLD METALLIZATION· EMITTER SITE BALLASTING· INTERNAL INPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC PACKAGE· COMMON EMITTER CONFIGURATION· POUT =1.5 W MIN. WITH 9.5 dB GAINSpecificatio...

SD5000 Data Sheet

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Part Number:
SD5000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· GOLD METALLIZATION
· EMITTER SITE BALLASTING
· INTERNAL INPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC PACKAGE
· COMMON EMITTER CONFIGURATION
· POUT =1.5 W MIN. WITH 9.5 dB GAIN




Specifications

Symbol
Parameter
Value
Unit
VCBO
 Collector-Base Voltage
50
V
VCES
 Collector-Emitter Voltage
50
V
VEBO
 Emitter-Base Voltage
3.5
V
IC
 Device Current
1.0
A
PDISS
 Power Dissipation
7.0
W
TJ
 Junction Temperature
+200
TSTG
 Storage Temperature
- 65 to +150



Description

The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz.

SD5000 uses gold metallized die and polysilicon site ballasting to achieve high reliability and rug-gedness.

The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems.




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