Transistors RF Bipolar Power NPN 65 Volt 31.8W
SD4011: Transistors RF Bipolar Power NPN 65 Volt 31.8W
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 65 V | ||
Emitter- Base Voltage VEBO : | 3.5 V | Continuous Collector Current : | 1.59 A | ||
Maximum DC Collector Current : | 1.59 A | Power Dissipation : | 31.8 W | ||
Package / Case : | M122 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 65 | V |
VCES | Collector-Emitter Voltage | 65 | V |
VEBO | Emitter-Base Voltage | 3.5 | V |
IC | Device Current | 1.59 | A |
PDISS | Power Dissipation | 31.8 | W |
TJ | Junction Temperature | +200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4011 is a gold metallized NPN silicon bipolar device optimized for Class A operation in TV Band IV/V.
Suitable for a variety of other UHF linear applications, SD4011 is supplied in an industry-standard .280 stud package.