Transistors RF MOSFET Power POWER R.F.
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 250 MHz | Gain : | 26.8 dB at 123 MHz |
Output Power : | 350 W | Drain-Source Breakdown Voltage : | 250 V |
Continuous Drain Current : | 20 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | M244 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain Source Voltage | 250 | V |
VDGR | Drain-Gate Voltage (RGS = 1MΩ) | 250 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Drain Current | 20 | A |
PDISS | Power Dissipation | 500 | W |
Tj | Max. Operating Junction Temperature | 200 | °C |
TSTG | Storage Temperature | -65 to +150 | °C |
The SD3932 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 100 V dc large signal applications up to 150 MHz.
Technical/Catalog Information | SD3932 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 250V |
Current Rating | 20A |
Package / Case | M244 |
Packaging | Tray |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD3932 SD3932 497 8302 ND 4978302ND 497-8302 |