SD241

The SD241 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)boardband RF power amplifiers; (2)high speed switches and drivers; (3)pulsed amplifiers and logic buffers; (4)CMOS and TTL to high curent interface.

Features of the SD241 are:(1)low capacitance 11 pF typ.; (2)inherently temperature stable by design; (3)TTL logic compatible input 2.0 V (max.).

The absolute maximum ratings of the SD241 can be summarized as:(1)drain source voltage: +25 V;(2)gate-source voltage: +/-20.0 V;(3)peak pulsed drain current: 1.0 A;(4)thermal resistance: 333 mW/ or 83 mW/;(5)operating junction and storage temperature range: -55 to +125 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD241, please download the datasheet in www.seekic.com or www.chinaicmart.com .