SD211DE

The SD211DE is designed as one kind of N-channel lateral DMOS switch device that consists of enhancement-mode MOSFETs and can be used for high speed low-glitch switching in audio, video, and high-frequency applications such as fast analog switch, fast sample-and-holds, pixel-rate switching, DAC deglitchers and high-speed driver.

Features of the SD211DE are:(1)Ultra-High Speed Switching - tON: 1 ns; (2)Ultra-Low Reverse Capacitance: 0.2 pF; (3)Low Guaranteed rDS @5 V; (4)Low Turn-On Threshold Voltage; (5)N-Channel Enhancement Mode. And this device has some points of benefits such as (1)single supply operation; (2)simple driver requirement; (3)low transfer signal loss; (4)low insertion loss at high frequencies; (5)high-speed system performance.

The absolute maximum ratings of the SD211DE can be summarized as:(1)Gate-Drain, Gate-Source Voltage: -30 V;(2)Gate-Substrate Voltage: -0.3 V;(3)Drain-Source Voltage: 30 V;(4)Source-Drain Voltage: 10 V;(5)Drain-Substrate Voltage: 30 V;(6)Source-Substrate Voltage: 15 V;(7)Drain Current: 50 mA;(8)Lead Temperature (1/16" from case for 10 seconds): 300 ;(9)Storage Temperature: -65 to 150 ;(10)Operating Junction Temperature: -55 to 125 ;(11)Power Dissipation: 300 mW. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .